Circular photogalvanic effect in organometal halide perovskite CH3NH3PbI3
نویسندگان
چکیده
منابع مشابه
Material Innovation in Advancing Organometal Halide Perovskite Functionality.
Organometal halide perovskites (OMHPs) have garnered much attention recently for their unprecedented rate of increasing power conversion efficiency (PCE), positioning them as a promising basis for the next-generation photovoltaic devices. However, the gap between the rapid increasing PCE and the incomplete understanding of the structure-property-performance relationship prevents the realization...
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Organometal halide perovskites have recently attracted tremendous attention due to their potential for photovoltaic applications, and they are also considered as promising materials in light emitting and lasing devices. In this work, we investigated in detail the cryogenic steady state photoluminescence properties of a prototypical hybrid perovskite CH3NH3PbI3-xClx. The evolution of the charact...
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Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays. Here, we report high-brightness light-emitting diodes based on ...
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The circular photogalvanic effect (CPGE) is the part of a photocurrent that switches depending on the sense of circular polarization of the incident light. It has been consistently observed in systems without inversion symmetry and depends on non-universal material details. Here we find that in a class of Weyl semimetals (for example, SrSi2) and three-dimensional Rashba materials (for example, ...
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P. Olbrich,1 S. A. Tarasenko,2 C. Reitmaier,1 J. Karch,1 D. Plohmann,1 Z. D. Kvon,3 and S. D. Ganichev1 1Terahertz Center, University of Regensburg, 93040 Regensburg, Germany 2A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia 3Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia Received 26 January 2009; pub...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4967176